Modelling of crystal originated particles and their impact on gate oxide integrity
Beards, T Mertens, PW Woerlee, PH Wallinga, H Schmolke, R Heyns, Marc #
Electrochemical Society Inc
Semiconductor silicon 2002, vols 1 and 2 vol:2002 issue:2 pages:528-539
Electrochemical Society Series
9th International Symposium on Silicon Materials Science and Technology location:Philadelphia, PA date:13-17 May 2002
The effect of substrate defects (voids) on gate oxide integrity is investigated. First, some experimental results are reviewed to motivate our modelling approach. It is shown that defects appearing at the surface (Crystal Originated Particles) have a detrimental impact, but this impact vanishes for oxides thinner than approximately 5 nm. Next, defects are imitated by etching pits in the substrate surface. Oxide growth in these defects is studied, and compared with computer simulations. The effect of local field strength variations is discussed, and shown to be responsible for the gate oxide integrity degradation.