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Title: Effective work function modulation by controlled dielectric monolayer deposition
Authors: Pantisano, L ×
Schram, T
O'Sullivan, B
Conard, T
De Gendt, Stefan
Groeseneken, Guido
Zimmerman, P
Akheyar, A
Heyns, M. M
Shamuilla, S
Afanas'ev, Valeri
Stesmans, Andre #
Issue Date: Sep-2006
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:89 issue:11 pages:1-3
Article number: 113505
Abstract: It is shown that the interface between gate dielectric and metal electrode critically determines the effective work function and hence metal oxide semiconductor field effect transistor threshold voltage. Electrostatic potential at the interface is perturbed by a polarization layer and this can be engineered at a monolayer level. It is demonstrated that the interface polarization layer can be modified by carefully depositing both dielectric and metal gate materials followed by a high temperature treatment offering a route to work function control. (c) 2006 American Institute of Physics.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
Electrical Engineering - miscellaneous
Semiconductor Physics Section
ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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