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Title: Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices
Authors: Trojman, Lionel ×
Ragnarsson, L.A.
Pantisano, L.
Lujan, G.S.
Houssa, Michel
Schram, T.
Cubaynes, F.
Schaekers, M.
Van Ammel, A.
Groeseneken, Guido
De Gendt, Stefan
Heyns, Marc #
Issue Date: Jun-2005
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:80 pages:86-89
Abstract: in this paper the effects from the high-kappa dielectric thickness and the metal gate deposition technique on the mobility of n-channel MOS transistors are investigated. The results reveal mobility degradation due to an increase of charge density in the dielectric and / or at the material interfaces, not efficiently compensated by the screening effect from the gate. We correlate this mobility degradation to the reduction observed in a comparison between metal and poly-Si gated MOSFETs. It is shown that the mobility can be improved by using different metals deposition technique, which indicates that the mobility reduction is related to the deposition technique.
URI: 
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Electrical Engineering - miscellaneous
Semiconductor Physics Section
Molecular Design and Synthesis
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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