Title: Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy
Authors: Zhang, Y ×
McAleese, C
Xiu, H
Humphreys, C. J
Lieten, Ruben
Degroote, S
Borghs, Gustaaf #
Issue Date: Aug-2007
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:91 issue:9 pages:-
Article number: 092125
Abstract: Structural characterization has been performed on (0001)-GaN epilayers grown on (111)-Ge substrates using plasma assisted molecular beam epitaxy. By combining high-resolution x-ray diffraction, transmission electron microscopy, and scanning transmission electron microscopy, it has been shown that the GaN epilayer consists of misoriented domains. The domains are rotated about the GaN-[0001] (Ge-[111]) zone axis by 8 degrees with respect to each other and by +/- 4 degrees with respect to the Ge substrate. These domains need to be eliminated to reduce grain boundary defects and improve GaN crystal quality.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
Semiconductor Physics Section
× corresponding author
# (joint) last author

Files in This Item:
File Description Status SizeFormat
2007 - Misoriented domains in 0001-GaN-111-Ge grown by molecular beam epitaxy - Y. Zhang - APL 91.pdfMain article Published 229KbAdobe PDFView/Open Request a copy

These files are only available to some KU Leuven Association staff members


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science