Title: Crystalline Ge3N4 on Ge(111)
Authors: Lieten, Ruben ×
Degroote, S
Kuijk, M
Borghs, Gustaaf #
Issue Date: Nov-2007
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:91 issue:22 pages:-
Article number: 222110
Abstract: The exposure of Ge(111) to a nitrogen plasma at temperatures above which Ge3N4 is thermally stable leads to the formation of a thin, monocrystalline Ge3N4 layer. At these temperatures, equilibrium is established between the formation and dissociation of Ge3N4, limiting its thickness to 0.7 nm at similar to 800 degrees C. The thermal stability of a crystalline Ge3N4 layer is comparable to an amorphous one. It starts to evaporate at temperatures above 600 degrees C. Crystalline Ge3N4 allows the growth of III-nitrides on top of Ge(111) substrates and possibly the passivation of Ge-based field effect transistors. (C) 2007 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
Semiconductor Physics Section
× corresponding author
# (joint) last author

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