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Title: Properties and dynamic behavior of electron traps in HfO2/SiO2 stacks
Authors: Zhao, CZ ×
Zahid, MB
Zhang, JF
Groeseneken, Guido
Degraeve, R
De Gendt, Stefan #
Issue Date: Jan-2005
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:80 pages:366-369
Abstract: This paper focuses on electron traps in HfO2/SiO2 stacks. Three issues are addressed: the impact of measurement techniques on trapping, the dependence of trapping on the conduction mechanism, and the trapping kinetics. It will be shown that the traditional 'DC Id similar to Vg' technique can underestimate the trap density. Trapping is sensitive to the conduction mechanism. The trap-assisted conduction, such as SILC and thermally enhanced conduction, contributes little to the trapping. Possible explanations for this phenomenon will be explored. Trapping follows the first order model and the capture cross section of traps is estimated.
URI: 
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Molecular Design and Synthesis
× corresponding author
# (joint) last author

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