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Title: Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode
Authors: Rudenko, T ×
Collaert, N
De Gendt, Stefan
Kilchytska, V
Jurczak, M
Flandre, D #
Issue Date: Jan-2005
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:80 pages:386-389
Abstract: In this work, the effective mobility in n- and p-channel FinFETS with silicon oxynitride and HfO2 gate dielectrics and TaN gate electrode is studied as a function of the inversion charge density using a split C-V technique. The mobility behavior in narrow-fin devices is compared to that in quasi-planar wide-fin devices, and the mechanisms responsible for the observed differences are discussed. The devices with HfO2 and silicon oxynitride gate dielectrics exhibit similar mobility behavior.
URI: 
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
× corresponding author
# (joint) last author

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