Title: Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As(001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics
Authors: Chu, L. ×
Merckling, C.
Alian, A.
Dekoster, J.
Kwo, J.
Hong, M.
Caymax, M.
Heyns, Marc #
Issue Date: Jul-2011
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:99 issue:4
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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