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Title: A study of relaxation current in high-k gate stacks
Authors: Xu, Zhen ×
De Gendt, Stefan
Groeseneken, Guido
Pantisano, Luigi
Kerber, Andreas
Degraeve, Robin
Cartier, Eduard
Heyns, Marc #
Issue Date: Mar-2004
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Transactions on Electron Devices vol:51 issue:3 pages:402-408
Abstract: Dielectric relaxation currents in SiO2/Al2O3 and SiO2/HfO2 high-kappa dielectric stacks are studied in this paper. We studied the thickness dependence, gate voltage polarity dependence and temperature dependence of the relaxation current in high-kappa dielectric stacks. It is found that high-kappa dielectric stacks show different characteristics than what is expected based on the dielectric material polarization model. By the drain current variation measurement in n-channel MOSITET, we confirm that electron trapping and detrapping in the high-kappa dielectric stacks is the cause of the dielectric relaxation current. From substrate injection experiments, it is also concluded that the relaxation current is mainly due to the traps located near the SiO2/high-kappa interface. As the electron trapping induces a serious threshold voltage shift problem, a low trap density at the SiO2/high-kappa interface is a key requirement for high-kappa dielectric stack application and reliability in MOS devices.
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Department of Materials Engineering - miscellaneous
Molecular Design and Synthesis
ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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