Title: Structural Characterisation of Improved GaN Epilayers Grown on a Ge(111) Substrate
Authors: Zhang, Yucheng ×
Fu, Wai-Yuan
Humphreys, Colin
Lieten, Ruben #
Issue Date: 26-Aug-2011
Publisher: Institute of Pure and Applied Physics
Series Title: Applied Physics Express vol:4 issue:9 pages:-
Article number: 091001
Abstract: Despite the large lattice mismatch between GaN and Ge of 20.1%, the successful growth of GaN on Ge(111) using plasma-assisted molecular beam epitaxy (PA-MBE) has been achieved. Recent work has shown that the crystal quality of GaN can be improved using either a miscut substrate or a higher growth temperature (above 800 degrees C), to enhance the step-flow growth. This paper reports the structural characterisation of these improved GaN epilayers grown on Ge. The threading dislocation density has been measured using cross-sectional transmission electron microscopy (TEM) imaging. The polarity of the epilayers is determined using convergent beam electron diffraction (CBED). (C) 2011 The Japan Society of Applied Physics
ISSN: 1882-0778
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

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