This item still needs to be validated !
Title: Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
Authors: Nohira, H.
Tsai, W.
Besling, W.
Young, E.
Petry, J.
Conard, T.
Vandervorst, Wilfried
De Gendt, Stefan
Heyns, Marc
Maes, J.
Tuominen, M. #
Issue Date: Jan-2002
Publisher: Elsevier science bv
Series Title: Journal of non-crystalline solids vol:303 issue:1 pages:83-87
Abstract: The atomic layer chemical vapor deposition (ALCVD) deposited Al2O3 and ZrO2 films were investigated by ex situ X-ray photoelectron spectroscopy. The thickness dependence of band gap and valence band alignment was determined for these two dielectric layers. For layers thicker than 0.9 nm (Al2O3) or 0.6 nm (ZrO2), the band gaps of the Al2O3 and ZrO2 films deposited by ALCVD are 6.7+/-0.2 and 5.6+/-0.2 eV, respectively. The valence band offsets at the Al2O3/Si and ZrO2/Si interface are determined to be 2.9+/-0.2 and 2.5+/-0.2 eV, respectively. Finally, the escape depths of Al2p in Al2O3 and Zr3p3 in ZrO2 are 2.7 and 2.0 nm, respectively. (C) 2002 Published by Elsevier Science B.V.
ISSN: 0022-3093
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Molecular Design and Synthesis
Solid State Physics and Magnetism Section
Department of Materials Engineering - miscellaneous
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science