Author:

Keywords:

Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Physics, Applied, Physics, Condensed Matter, Engineering, Physics, 0204 Condensed Matter Physics, 0206 Quantum Physics, Applied Physics, 5104 Condensed matter physics, 5108 Quantum physics

Abstract:

Issues related to the aggressive sealing of advanced devices that necessitated the search for a suitable high-k-gate dielectric were analyzed. Solutions to reduce the HfO2/polysilicon interaction include the use of composite dielectric structures. The higher quality gate stacks are produces with metal gates and bring the expected long-term performance. The results demonstrated the potential of high-k-dielectrics and metal gates for sub-Inm EOT scaling.