Title: A Fully Integrated CMOS Power Amplifier For LTE-applications Using Clover Shaped DAT
Authors: François, Brecht ×
Reynaert, Patrick #
Issue Date: 12-Sep-2011
Publisher: Institute of Electrical and Electronics Engineers
Host Document: Proceedings of the IEEE
Conference: European Solid-State Circuits Conference 2011 edition:37 location:Helsinki date:12-16 Sept 2011
Abstract: In this paper, a Distributed Active Transformer (DAT) is used to implement a fully-integrated RF power amplifier (PA) for the extended GSM-band and LTE band VIII in a standard 90 nm CMOS process. The DAT allows the designer to integrate both the input and output matching networks as the power combining itself on the same silicon die. The PA delivers up to 29.4 dBm of RF power with 28.4% drain efficiency and a power added efficiency (PAE) of 25.8% by using a 2 V supply voltage. The PA is measured for both GSM-signals and LTE-signals. For GSM, the maximum output power is 29.1 dBm. The corresponding output spectrum at 400 kHz and 600 kHz frequency offset is -68 dBc and -70 dBc and meets the spectral mask requirements. The Power versus Time (PvT) measurement shows that the time domain constraints are met. When applying a LTE-signal with 10 MHz bandwidth and a PAPR of 6.92 dB to the RF PA, the designed PA meets the EVM specification at 25 dBm average output power with 15% PAE.
Publication status: published
KU Leuven publication type: IC
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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