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Title: Carrier distribution in silicon devices by atomic-force microscopy on etched surfaces
Authors: Raineri, V ×
Privitera, V
Vandervorst, Wilfried
Hellemans, Louis
Snauwaert, Johan #
Issue Date: Jan-1994
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:64 issue:3 pages:354-356
Abstract: The selective chemical etching of silicon containing an impurity profile was used to obtain surface topography related to the local carrier concentration. Atomic force microscopy (AFM) was then used to image this topography. Through a calibration curve of etched depth versus carrier concentration, established by etching uniformly doped epitaxial silicon layers, it is possible to convert the AFM topographical data into carrier concentration. The technique was applied to measure directly the carrier distribution in submicron devices.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Chemistry - miscellaneous
× corresponding author
# (joint) last author

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