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Title: A 1.65W Fully Integrated 90nm Bulk CMOS Intrinsic Charge Recycling Capacitive DC-DC converter: Design & Techniques for High Power Density
Authors: Meyvaert, Hans ×
Van Breussegem, Tom
Steyaert, Michiel #
Issue Date: 21-Sep-2011
Host Document: Proceedings of the IEEE Energy Conversion Congress & Exposition pages:3234-3241
Conference: IEEE Energy Conversion Congress & Exposition location:Phoenix date:17-22 September 2011
Abstract: A fully integrated high power density capacitive 2:1 step-down DC-DC converter is designed in a standard Bulk CMOS technology. The implemented converter can deliver a maximum output power of 1.65W on a chip area of 2.14mm2, resulting in a power conversion density of 0.77W/mm2. Besides the primary goal of high power density a peak power conversion efficiency of 69% is achieved. This for a voltage step-down conversion from twice the nominal supply voltage of a 90nm technology (2Vdd = 2.4V) to 1V. Both the design as the implementation techniques to achieve the resulting power density, are discussed.
ISBN: 978-1-4577-0540-3
978-1-4577-0541-0
Publication status: published
KU Leuven publication type: IC
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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