Title: The fabrication of a novel composite gaas/sio2 nucleation layer on silicon for heteroepitaxial overgrowth by molecular-beam epitaxy
Authors: Deboeck, J ×
Alay, J
Vanhellemont, J
Brijs, B
Vandervorst, Wilfried
Borghs, Gustaaf
Blondeel, M
Vinckier, Christiaan #
Issue Date: Jan-1991
Publisher: Elsevier science sa lausanne
Series Title: Materials science and engineering b-solid state materials for advanced technology vol:9 issue:1-3 pages:137-141
Abstract: We report on the fabrication of a composite GaAs-SiO2 nucleation layer. The layer is formed by a deposition of a GaAs island layer by molecular beam epitaxy (MBE), followed by an oxidation step of the silicon regions surrounding the islands. In this way, small GaAs islands, for which the critical thickness for misfit dislocation generation is increased, are surrounded by a stable amorphous phase. Lateral overgrowth seeded by the individual GaAs islands might enhance the overall epilayer quality. We describe the fabrication and cleaning of such a composite GaAs-SiO(x) nucleation layer that is compatible with the epitaxy process. Preliminary regrowth on a non-optimized composite surface resulted in GaAs-on-silicon quality equal to standard GaAs-on-silicon. Compared with GaAs epitaxy on porous silicon, another seeded growth technique, the composite surface technique has greater technological potential for the monolithic integration of GaAs and silicon electronics.
ISSN: 0921-5107
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
Molecular Design and Synthesis
Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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