ITEM METADATA RECORD
Title: Effect of postdeposition anneal conditions on defect density of HfO2 layers measured by wet etching
Authors: Claes, M ×
De Gendt, Stefan
Witters, T
Kaushik, V
Conard, T
Zhao, C
Manabe, Y
Delabie, Annelies
Rohr, E
Chen, J
Tsai, W
Heyns, MM #
Issue Date: Jan-2004
Publisher: Electrochemical soc inc
Series Title: Journal of the electrochemical society vol:151 issue:11 pages:F269-F275
Abstract: The quality of HfO2 dielectric layers was systematically evaluated using wet etching monitored by open-circuit potential analysis. Scanning electron microscopy imaging was used to observe changes in the topography after etching. Our results showed that surface pretreatment prior to high-k deposition, as well as postdeposition treatments, have an effect on the quality of the high-k material as seen from the etch behavior of these materials. The wet etch defect monitoring was subsequently used to improve the quality of the high-k films. As-deposited films may have a high defect density of 1.10(9) wet-etch defects/cm(2). However, after appropriate postdeposition annealing, high-k layers with reduced defect density can be obtained. A lower defect density can also be correlated to improved electrical properties of the high-k layer. The presence of defects is speculated as being due to crystallization phenomena and/or an oxygen-deficient HfO2 film, evidenced by Si/SiO up-diffusion upon thermal treatment. (C) 2004 The Electrochemical Society.
URI: 
ISSN: 0013-4651
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
Quantum Chemistry and Physical Chemistry Section
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science