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Title: RF split capacitance-voltage measurements of short-channel and leaky MOSFET devices
Authors: Andres, E. San ×
Pantisano, L
Ramos, J
Severi, Simone
Trojman, Lionel
De Gendt, Stefan
Groeseneken, Guido #
Issue Date: Jan-2006
Publisher: Ieee-inst electrical electronics engineers inc
Series Title: IEEE Electron Device Letters vol:27 issue:9 pages:772-774
Abstract: In this letter, the feasibility of split-capacitance-voltage (C-V) measurements in the RF range is demonstrated. These RF/split-C-V measurements show excellent agreement with the values obtained by the low-frequency conventional technique but without presenting any noticeable degradation due to gate leakage.
URI: 
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
Molecular Design and Synthesis
ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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