ITEM METADATA RECORD
Title: A 96% Efficient High-Frequency DC-DC Converter Using E-Mode GaN DHFETs on Si
Authors: Das, J. *
Everts, Jordi * ×
Van den Keybus, J.
Van Hove, M.
Visalli, D.
Srivastava, P.
Marcon, D.
Cheng, K.
Leys, M.
Decoutere, S.
Driesen, Johan
Borghs, G. #
Issue Date: 18-Aug-2011
Publisher: Institute of Electrical and Electronics Engineers
Series Title: IEEE Electron Device Letters vol:32 issue:10 pages:1370-1372
Abstract: III-Nitride materials are very promising to be used in next-generation high-frequency power switching applications. In this letter, we demonstrate the performance of normally off AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs) using a boost-converter circuit. The figures of merit of our large (57.6-mm gate width) GaN transistor are presented: $R_{rm ON} ast Q_{G}$ of 2.5 $Omegacdothbox{nC}$ is obtained at $V_{rm DS} = hbox{140 V}$. The switching performance of the GaN DHFET is studied in a dedicated high-frequency boost converter: both the switching times and power losses are characterized. We show converter efficiency values up to 96.1% at 500 kHz and 93.9% at 850 kHz at output power of 100 W.
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - ELECTA, Electrical Energy Computer Architectures
* (joint) first author
× corresponding author
# (joint) last author

Files in This Item:
File Description Status SizeFormat
05985468.pdfMain article Published 153KbAdobe PDFView/Open

 


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science