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Title: Thermal optimization of GaN-on-Si HEMTs with plastic package
Authors: Liu, Rui
Schreurs, Dominique ×
De Raedt, W
Vanaverbeke, F
Mertens, Robert Pierre
De Wolf, Ingrid #
Issue Date: Sep-2011
Publisher: Pergamon-elsevier science ltd
Series Title: Microelectronics Reliability vol:51 issue:9-11 pages:1788-1791
Abstract: In this paper, the degradation of a GaN-on-Si based RF power amplifier is investigated by means of electrical characterization. The reliability issues identified during this work are clearly related to the high thermal resistance between the device and the heat sink, which causes gate-leakage current and output power degradation. Moreover, we have demonstrated a low cost thermal optimization approach by increasing the thermal dissipation area and reducing the device carrier thickness. Measurement results show that the saturated output power can be increased from 1 W up to 5 W without device degradation at 3.8 GHz. (C) 2011 Elsevier Ltd. All rights reserved.
ISSN: 0026-2714
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT- TELEMIC, Telecommunications and Microwaves
Department of Materials Engineering - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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