Title: Breakdown-induced thermochemical reactions in HfO2 high-kappa/polycrystalline silicon gate stacks
Authors: Ranjan, R ×
Pey, KL
Tung, CH
Tang, LJ
Ang, DS
Groeseneken, Guido
De Gendt, Stefan
Bera, LK #
Issue Date: Jan-2005
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:87 issue:24 pages:242907-1-242907-3
Abstract: The chemistry of dielectric-breakdown-induced microstructural changes in HfO2 high-kappa/polycrystalline silicon gate nMOSFETs under constant voltage stress has been studied. Based on an electron energy loss spectrometry analysis, the hafnium and oxygen chemical bonding in the breakdown induced Hf-based compounds of a "ball-shaped" defect is found to be different compared to the stoichiometric HfO2 and SiO2. The formation of possibly HfSixOy and HfSix compounds in the "ball-shaped" defect is attributed to a thermochemical reaction triggered by the gate dielectric breakdown.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
Molecular Design and Synthesis
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science