Title: A novel resist and post-etch residue removal process using ozonated chemistry
Authors: De Gendt, Stefan
Wauters, J
Heyns, Marc #
Issue Date: Jan-1998
Publisher: Pennwell publ co solid state technology office
Series Title: Solid state technology vol:41 issue:12 pages:57-61
Abstract: A novel, environmentally friendly process has successfully removed photoresist and organic post-etch residues from silicon surfaces. The moist ozone gas phase process described here greatly increases organic removal efficiency and is expected to replace most sulfuric-based process steps in IC production.
ISSN: 0038-111X
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
Department of Architecture - miscellaneous
Department of Materials Engineering - miscellaneous
# (joint) last author

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