Title: Influence of the UV Cure on Advanced Plasma Enhanced Chemical Vapour Deposition Low-k Materials
Authors: Verdonck, Patrick ×
Van Besien, Els
Vanstreels, Kris
Trompoukis, Christos
Urbanowicz, Adam
De Roest, David
Baklanov, Mikhail R #
Issue Date: May-2011
Publisher: Publication Board, Japanese Journal of Applied Physics
Series Title: Japanese Journal of Applied Physics 1, Regular Papers, Short Notes & Review Papers vol:50 issue:5 pages:-
Article number: 05EB05
Abstract: In a recent study, low-k thin films with low dielectric constant (<= 2.1) and high Young's modulus (> 5 GPa) were obtained by introducing a remote plasma step between the traditional plasma enhanced chemical vapour deposition and UV curing. This study shows that the UV curing step with a narrow band lamp with wavelength of 172 nm induced more network Si-O and Si-H bonds and more densification than the curing step with a broadband lamp with wavelengths higher than 200 nm. As a consequence, the dielectric constant of the narrow band cured film was slightly higher, but Young's modulus and hardness were much improved. Electrical characterization showed good breakdown voltages and a more than sufficient time dependent dielectric breakdown reliability. The broadband lamp was then used to form thicker films which retained very well the characteristics of the thin films. (C) 2011 The Japan Society of Applied Physics
ISSN: 0021-4922
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
ESAT - ELECTA, Electrical Energy Computer Architectures
× corresponding author
# (joint) last author

Files in This Item:
File Description Status SizeFormat
JJAP-50-05EB05[1].pdfArticle Published 311KbAdobe PDFView/Open


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science