Author:

Keywords:

iii-v semiconductors, electronic transport, inas, movpe, nanowires, raman spectroscopy, iii-v nanowires, optoelectronic devices, silicon nanowires, epitaxial-growth, scattering, transistors, Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Applied, Physics, Condensed Matter, Materials Science, Physics, III-V semiconductors, InAs, MOVPE, Raman spectroscopy, III-V NANOWIRES, OPTOELECTRONIC DEVICES, SILICON NANOWIRES, EPITAXIAL-GROWTH, SCATTERING, TRANSISTORS, 0204 Condensed Matter Physics, 0912 Materials Engineering, 1007 Nanotechnology, Applied Physics, 4016 Materials engineering, 4018 Nanotechnology, 5104 Condensed matter physics

Abstract:

In this paper, we show the results of experiments of InAs nanowire (NW) growth on (111)-oriented Si wafers. The NWs, grown at 620 degrees C by metal-organic vapor-phase epitaxy, are vertically aligned and similar to 30 nm in diameter. Their structural properties are studied by transmission electron microscopy, evidencing a polytypic character, and the vibrational properties by Raman spectroscopy. An assessment of their electrical transport properties is carried out by measuring back-gated, single InAs NW field-effect transistors. The absence of a catalyst ensures the compatibility of the NW growth process with current CMOS technology. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim