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Title: Large-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPE
Authors: Cantoro, Mirco ×
Wang, Gang
Lin, Dennis
Klekachev, Alexander
Richard, O
Bender, H
Kim, Tae-Gon
Clemente, F
Adelmann, C
van der Veen, M. H
Brammertz, G
Degroote, S
Leys, M
Caymax, M
Heyns, Marc
De Gendt, Stefan #
Issue Date: Jan-2011
Publisher: Wiley-VCH Verlag GMBH
Series Title: Physica Status Solidi A, Applications and Materials Research vol:208 issue:1 pages:129-135
Abstract: In this paper, we show the results of experiments of InAs nanowire (NW) growth on (111)-oriented Si wafers. The NWs, grown at 620 degrees C by metal-organic vapor-phase epitaxy, are vertically aligned and similar to 30 nm in diameter. Their structural properties are studied by transmission electron microscopy, evidencing a polytypic character, and the vibrational properties by Raman spectroscopy. An assessment of their electrical transport properties is carried out by measuring back-gated, single InAs NW field-effect transistors. The absence of a catalyst ensures the compatibility of the NW growth process with current CMOS technology. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
ISSN: 1862-6300
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
Semiconductor Physics Section
Molecular Design and Synthesis
× corresponding author
# (joint) last author

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