Title: Silicide engineering to boost Si tunnel transistor drive current
Authors: Leonelli, Daniele ×
Vandooren, Anne
Rooyackers, Rita
Verhulst, Anne S
De Gendt, Stefan
Heyns, Marc
Groeseneken, Guido #
Issue Date: Apr-2011
Publisher: Publication Board, Japanese Journal of Applied Physics
Series Title: Japanese Journal of Applied Physics 1, Regular Papers, Short Notes & Review Papers vol:50 issue:4 pages:-
Article number: 04DC05
Abstract: In this paper, we present for the first time a novel Si p-tunnel field effect transistor (pTFET) with high-k dielectric and metal gate fabricated in a multiple gate technology. The device exhibits an on-state current of 7 mu A/mu m at V-DD of 0.9 V and a high I-ON/I-OFF ratio of similar to 10(6) with a fin width of 10 nm. The high on-current is believed to be due to an enhanced electric field caused by silicide encroachment and dopant segregation. Low variability of the device performance is reported for the different fin widths. Temperature measurements also show that the current is due to different transport mechanisms at different gate biases. Temperature measurements and TCAD simulations both confirm the presence of trap-assisted tunneling (TAT) as main responsible for the degradation of the subthreshold swing. (C) 2011 The Japan Society of Applied Physics
ISSN: 0021-4922
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
Molecular Design and Synthesis
× corresponding author
# (joint) last author

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