Title: H2S molecular beam passivation of Ge(0 0 1)
Authors: Merckling, C. ×
Chang, Y.C.
Lu, C.Y.
Penaud, J.
El-Kazzi, M.
Bellenger, F.
Brammertz, G.
Hong, M.
Kwo, J.
Meuris, M.
Dekoster, J.
Heyns, Marc
Caymax, M. #
Issue Date: Apr-2011
Publisher: North-Holland
Series Title: Microelectronic Engineering vol:88 issue:4 pages:399-402
Conference: EMRS 2010, Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials location:Strasbourg, France date:07-11 June 2010
Abstract: A fundamental issue regarding the introduction of high-mobility Ge channels in CMOS circuits is the electrical passivation of the interface with the high-k gate dielectric. In this paper, we investigate the passivation of p-Ge(0 0 1) using molecular H2S. The modification of the semiconductor surface is monitored in situ by RHEED and the interface is characterized by XPS analyses. MOS capacitors are fabricated to extract interface state density, and finally we demonstrate the efficiency of the passivation scheme using a combination with an ultra thin Al interlayer. (C) 2010 Elsevier B.V. All rights reserved.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
Surface and Interface Engineered Materials
× corresponding author
# (joint) last author

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