Title: Experimental and theoretical investigation of defects at (100) Si1-xGex/oxide interfaces
Authors: Houssa, Michel ×
Pourtois, G
Meuris, M
Heyns, Marc
Afanas'ev, Valeri
Stesmans, Andre #
Issue Date: Apr-2011
Publisher: North-Holland
Series Title: Microelectronic Engineering vol:88 issue:4 pages:383-387
Conference: EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials Strasbourg, FRANCE, JUN 07-11, 2010
Abstract: The identification of a nontrigonal Ge dangling bond at SiO2/Si1-xGex/SiO2 heterostructures and its electrical activity are discussed, both from experimental and theoretical points of view. This dangling bond is observed from multifrequency electron-spin resonance experiments performed at 4.2 K, for typical Ge concentrations in the range 0.4 <= x >= 0.85. The electrical activity of this defect is revealed from capacitance-voltage characteristics measured at 300 and 77 K, and is found to behave like an acceptor defect. First-principles calculations of the electronic properties of this Ge dangling bond indicate that its energy level approaches the valence band edge of the Si1-xGex layer as the Ge content increases, confirming its acceptor-like nature. (C) 2010 Elsevier B.V. All rights reserved.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Department of Materials Engineering - miscellaneous
Semiconductor Physics Section
× corresponding author
# (joint) last author

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