Si and Se implantations have been systematically investigated in In0.53Ga0.47As. Different implant doses and various activation anneals with temperatures up to 700 degrees C have been examined. Raising Si implant dose from 1 x 10(14) to 1 x 10(15) cm(-2) was found to increase the active doping concentration by about a factor of two. As confirmed by Transmission Electron Microscopy (TEM) and electrical measurements, the rest of the implanted Si ions remain as defects in the crystal and degrade the mobility. It was also confirmed from Secondary Ion Mass Spectrometry (SIMS) that the Si diffusivity in InGaAs is negligible up to 700 degrees C implant activation anneal making Si a suitable option for the formation of shallow junctions in InGaAs. The activation efficiency, sheet resistance, carrier density and mobility data of 25 keV Se and Si implanted InGaAs layers are also presented under various activation anneal temperatures. (C) 2010 Elsevier B.V. All rights reserved.