Author:

Keywords:

wafer, Science & Technology, Physical Sciences, Technology, Electrochemistry, Materials Science, Coatings & Films, Materials Science, WAFER, 0303 Macromolecular and Materials Chemistry, 0306 Physical Chemistry (incl. Structural), 0912 Materials Engineering, Energy, 3406 Physical chemistry, 4016 Materials engineering

Abstract:

Sensitive light scattering measurements are used to quantify the amount of residues after photoresist stripping on different substrates. The high sensitivity of this technique provides unique information regarding the efficiency of several stripping procedures by identifying photoresist traces that could not be easily detected by other methods. The proposed procedure permits the optimization of photoresist contamination removal steps like dry and wet stripping on a quantitative basis.