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Title: The future of high-K on pure germanium and its importance for GeCMOS
Authors: Meuris, M ×
Delabie, Annelies
Van Elshocht, S
Kubicek, S
Verheyen, P
De Jaeger, B
Van Steenbergen, J
Winderickx, G
Van Moorhern, E
Puurunen, RL
Brijs, B
Caymax, M
Conard, T
Richard, O
Vandervorst, Wilfried
Zhao, C
De Gendt, Stefan
Schram, T
Chiarella, T
Onsia, B
Teerlinck, I
Houssa, Michel
Mertensa, PW
Raskin, G
Mijlemans, P
Biesemans, S
Heyns, MM #
Issue Date: Feb-2005
Publisher: Pergamon
Series Title: Materials Science in Semiconductor Processing vol:8 issue:1-3 pages:203-207
Abstract: A comparison between atomic layer chemical vapor deposition (ALCVD) and metal organic chemical vapor deposition (MOCVD) HfO2 layers on Ge indicate that ALCVD layers have some improved capacitor characteristics. An NH3 pre-treatment was essential to obtain MOS C-V characteristics for the deposited HfO2 layer. We also report for the first time, deep sub-micron Ge pFETs made in a silicon-like process flow with a directly etched metal gate stack on a HfO2 dielectric. The results indicate that for improving Ge devices, more understanding on the clopant diffusion control and the reduction of interface state density will be necessary. (C) 2004 Elsevier Ltd. All rights reserved.
URI: 
ISSN: 1369-8001
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Molecular Design and Synthesis
Semiconductor Physics Section
× corresponding author
# (joint) last author

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