Journal de physique iv vol:9 issue:P8 pages:341-347
We have prepared (001) oriented epitaxial CeO2 films on (1102)sapphire by metal organic chemical vapour deposition. The film thickness was in the range from 10 to 100 run. The films exhibit extremely degree of preferred orientation, having half width at half maximum (FWHM) values of the X-ray diffraction rocking curve of the (002) CeO2 reflection as low as 0.05 degrees. This value is comparable to the FWHM of the rocking curve of the single crystal. We show the evolution of CeO2 the film rocking curve as a function of the thickness, deposition temperature and quality of die substrate. These results are compared with atomic force microscopy images of the film surface. A possible mechanism of the growth of CeO2 films exhibiting narrow peak of the rocking curve is discussed.