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Title: Gadolinium scandate thin films as an alternative gate dielectric prepared by electron beam evaporation
Authors: Wagner, M
Heeg, T
Schubert, J
Lenk, S
Mantl, S
Zhao, C
Caymax, M
De Gendt, Stefan #
Issue Date: Jan-2006
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:88 issue:17 pages:172901
Abstract: Gadolinium scandate thin films deposited on silicon substrates using electron beam evaporation were investigated. Measurements with Rutherford backscattering spectrometry, high temperature x-ray diffraction, x-ray reflectometry, transmission electron microscopy, and atomic force microscopy were performed. A stoichiometric transfer of material from the source to the substrate in high vacuum could be demonstrated. Homogeneous, amorphous, and smooth films (root mean square surface roughness < 1 A) stable up to 1000 degrees C were obtained. Electrical characterization of capacitor stacks revealed a dielectric constant of approximate to 23, C-V curves with small hysteresises and low leakage current densities (770 mu A/cm(2) for a capacitance equivalent thickness of 1.5 nm). (c) 2006 American Institute of Physics.
URI: 
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Molecular Design and Synthesis
# (joint) last author

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