Ultra clean processing of silicon surfaces 2000 vol:76-77 pages:67-70
This paper describes the differences in passivation of silicon surfaces after a dHF or dHF/dHCl last step, either followed by a rinsing step or not, and oxidized by either ozonated cleans or by a SCI clean. The oxide thickness produced by ozonated cleans on dHF last surfaces is around 12 Angstrom, which is twice as high compared to the oxide thickness produced by a SCI clean. The presence of CL on dHF/dHCl last surfaces somewhat seems to enhance the oxide thickness, although also Cl levels are measured on dHF last surfaces. The F and Cl concentration seems to decrease after a supplementary treatment.