Ultra clean processing of silicon surfaces 2000 vol:76-77 pages:227-230
The integration of an ozone vapor process in a gas environment for removal of organics in a static wet bench has been evaluated. Understanding of chemical interactions and kinetics of the reaction in a wet bench has been done. The success of this process is directly related to the control of the rinse conditions (frequency and duration). The performance has been shown for the stripping of I-line and DUV resists, with or without implantation. Stripping and rinse are done within 10 minutes for implantation level lower than 1e15 at/cm(2). Metallic and organic contamination levels are under the revel achieved after SC1. Safety conditions are also respected.