Title: Electron band alignment at the interface of (100)GaSb with molecular-beam deposited Al2O3
Authors: Afanas'ev, Valeri ×
Chou, Hsing-Yi
Stesmans, Andre
Merckling, C
Sun, X #
Issue Date: Feb-2011
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:98 issue:7 pages:072102-1-072102-3
Article number: 072102
Abstract: From internal photoemission and photoconductivity measurements at the (100)GaSb/Al2O3 interface, the semiconductor valence band is found to be 3.05 +/- 0.10 eV below the oxide conduction band. This band alignment corresponds to conduction and valence band offsets of 2.3 +/- 0.10 and 3.05 +/- 0.15 eV, respectively. These results indicate that the valence band in GaSb lies energetically well above the valence band in InxGa1-xAs (0 <= x <= 0.53) or InP, suggesting the possibility of fabrication of hole quantum-well channel structures. (C) 2011 American Institute of Physics. [doi:10.1063/1.3549878]
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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