Title: TiNx/HfO2 interface dipole induced by oxygen scavenging
Authors: Afanas'ev, Valeri ×
Stesmans, Andre
Pantisano, L
Cimino, S
Adelmann, C
Goux, L
Chen, Yangyin
Kittl, Jorge
Wouters, Dirk
Jurczak, M #
Issue Date: Mar-2011
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:98 issue:13 pages:132901-1-132901-3
Article number: 132901
Abstract: Electron barrier height measurements at TiNx/HfO2 interfaces in metal-insulator-metal structures using internal photoemission of electrons reveal a significant (approximate to 1 eV, i.e., about 1/3 of the total barrier height) influence of the opposite electrode material, i.e., Hf versus TiNx. This effect is suggested to be caused by oxygen scavenging from HfO2 by the opposite Hf electrode resulting in generation of positive charges in the oxide above the metal electrode surfaces. Such a considerable interface dipole component demonstrates a principle that may be used to tune the barrier. (C) 2011 American Institute of Physics. [doi:10.1063/1.3570647]
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
Electrical Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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