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Title: Electrical characterization of capacitors with AVD-deposited hafnium silicates as high-k gate dielectric
Authors: Van Elshocht, S. ×
Weber, U.
Conard, T.
Kaushik, V.
Houssa, Michel
Hyun, S.
Seitzinger, B.
Lehnen, P.
Schumacher, M.
Lindner, J.
Caymax, M.
De Gendt, Stefan
Heyns, Marc #
Issue Date: Jan-2005
Publisher: Electrochemical Society
Series Title: Journal of the Electrochemical Society vol:152 issue:11 pages:F185-F189
Abstract: We discuss the electrical properties of hafnium silicates with various composition deposited by atomic vapor deposition (AVD) as metal-oxide-semiconductor (MOS) capacitors. The deposited layers demonstrate well-behaved capacitance as function of gate voltage (CV) curves with a leakage as low as 5 X 10(-2) for an equivalent oxide thickness (EOT) of 1.3 nm. The permittivity (k-value) ranges from 6 to 14 depending on the composition of the hafnium silicate. Flatband voltage depends on the composition (and thickness) and varies between -0.10 and 0.45 V, from which we calculated the amount of net charge in the layer, between (-6 +/- 3)X10(11) and (20 +/- 3)X10(11)/cm(2). Postdeposition treatments at 800 degrees C in O-2 or NH3 shift the V-FB position up to 100 mV, together with a change of the amount of net charge. Fine-tuning the deposition and composition might nullify the net charge contribution in the layers. (c) 2005 The Electrochemical Society. All rights reserved.
URI: 
ISSN: 0013-4651
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
Molecular Design and Synthesis
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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