Title: Validation of retention modeling as a trap-profiling technique for SiN-based charge-trapping memories
Authors: Suhane, Amit ×
Arreghini, Antonio
Degraeve, Robin
Van den Bosch, Geert
Breuil, Laurent
Zahid, Mohammed
Jurczak, Malgorzata
De Meyer, Kristin
Van Houdt, Jan #
Issue Date: Jan-2010
Publisher: IEEE
Series Title: IEEE Electron Device Letters vol:31 issue:1 pages:77-79
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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