Title: High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy
Authors: Cheng, Kai ×
Leys, Maarten
Degroote, Stefan
Germain, Marianne
Borghs, Gustaaf #
Issue Date: 2008
Publisher: American Institute of Physics
Series Title: Applied Physics Letters vol:92 issue:19
Article number: 192111
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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