Title: Statistics of multiple trapped charges in the gate oxide of deeply scaled MOSFET devices‚Äîapplication to NBTI
Authors: Kaczer, Ben ×
Roussel, Philippe
Grasser, Tibor
Groeseneken, Guido #
Issue Date: May-2010
Publisher: IEEE
Series Title: IEEE Electron Device Letters vol:31 issue:5 pages:411-413
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science