Download PDF (external access)

IEEE International Electron Devices Meeting - IEDM, Date: 2010/12/06 - 2010/12/06, Location: San Francisco, CA USA

Publication date: 2010-01-01
Pages: 383 - 386
ISSN: 978-1-4244-7419-6
Publisher: Institute of Electrical and Electronics Engineers

Proceedings of the IEEE International Electron Devices Meeting - IEDM

Author:

Noda, Taichi
Vandervorst, Wilfried ; Vrancken, Christa ; Ortolland, Claude ; Rosseel, Erik ; Absil, Philippe ; Biesemans, Serge ; Hoffmann, Thomas Y

Keywords:

Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, DIFFUSION

Abstract:

An analysis of pocket profile deactivation and its impact on Vth variation for Laser annealed devices using an atomistic kinetic Monte Carlo (KMC) approach are shown. The Carbon co-implant impacts on pFET extension/pocket are also modeled using an atomistic KMC. KMC clarified that although B-pocket in nFET shows significant deactivation, As-pocket in pFET does not show deactivation with thermal budget scaling. pFET device shows smaller thermal budget scaling dependence of Vt mismatch than that of nFET. The difference of pocket deactivation is one of important reason for higher Vth mismatch for nFET than for pFET. ©2010 IEEE.