|ITEM METADATA RECORD
|Title: ||Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current tranients|
|Authors: ||Hayama, K|
Claeys, Cor #
|Issue Date: ||2008 |
|Series Title: ||Journal of Materials Science: Materials in Electronics vol:19 issue:2 pages:161-165|
|Publication status: ||published|
|KU Leuven publication type: ||IT|
|Appears in Collections:||Associated Section of ESAT - INSYS, Integrated Systems|
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