Title: Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current tranients
Authors: Hayama, K
Takakura, K
Ohyama, H
Rafi, J.M
Mercha, Abdelkarim
Simoen, Eddy
Claeys, Cor #
Issue Date: 2008
Publisher: Springer
Series Title: Journal of Materials Science: Materials in Electronics vol:19 issue:2 pages:161-165
ISSN: 0957-4522
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
# (joint) last author

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