Title: AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE
Authors: Cheng, Kai
Leys, Maarten
Derluyn, Joff
Balachander, Krishnan
Degroote, Stefan
Germain, Marianne
Borghs, Gustaaf
Issue Date: 2008
Publisher: Wiley
Host Document: Physica Status Solidi C vol:5 issue:6 pages:1600-1602
Conference: 7th International Conference on Nitride Semiconductors (ICNS-7) location:Las Vegas date:16 - 21 Sept 2007
ISSN: 1610-1634
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Semiconductor Physics Section

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science