Title: A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs
Authors: Marcon, Denis
Kauerauf, Thomas
Medjdoub, Farid
Das, Jo
Van Hove, Marleen
Srivastava, Puneet
Cheng, Kai
Leys, Maarten
Mertens, Robert
Decoutere, Stefaan
Meneghesso, Gaudenzio
Zanoni, Enrico
Borghs, Gustaaf #
Issue Date: Dec-2010
Host Document: Proceedings of the IEEE International Electron Device Meeting - IEDM pages:472-472
Conference: IEEE International Electron Device Meeting - IEDM location:San Francisco, CA USA date:6-dec-2010
ISBN: 978-1-4244-7419-6
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
Semiconductor Physics Section
# (joint) last author

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