|ITEM METADATA RECORD
|Title: ||Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE|
|Authors: ||Cheng, Kai|
|Issue Date: ||2008 |
|Host Document: ||Physica Status Solidi C vol:5 issue:6 pages:1624-1626|
|Conference: ||7th International Conference on Nitride Semiconductors (ICNS-7) location:Las Vegas date:16-21 Sept 2007|
|Publication status: ||published|
|KU Leuven publication type: ||IC|
|Appears in Collections:||Semiconductor Physics Section|
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