Title: Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE
Authors: Cheng, Kai
Motsnyi, Vasyl
Leys, Maarten
Degroote, Stefan
Sijmus, Bram
Germain, Marianne
Borghs, Gustaaf
Issue Date: 2008
Publisher: Wiley
Host Document: Physica Status Solidi C vol:5 issue:6 pages:1624-1626
Conference: 7th International Conference on Nitride Semiconductors (ICNS-7) location:Las Vegas date:16-21 Sept 2007
ISSN: 1610-1634
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Semiconductor Physics Section

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