Materials Science in Semiconductor Processing vol:11 issue:5-6 pages:368-371
International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting Strasbourg, FRANCE, MAY 26-30, 2008
The impact of the Ge pre-amorphization conditions on shallow B profiles, resulting from a 1 keV implantation in n-type Ge and a 500 degrees C 1 min rapid thermal anneal, is investigated. In general, an increase of the sheet resistance with lower Ge energy is observed. There is some evidence for tail diffusion, enhancing slightly the junction depth and reducing its steepness. This could point to end-of-range-mediated transient-enhanced diffusion (TED) of B in Ge. It is clear that for this to happen, a preamorphization is required which contains completely the B profile. (C) 2008 Elsevier Ltd. All rights reserved.