Title: Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers
Authors: Simoen, Eddy ×
Brouwers, Gijs
Eneman, Geert
Bargallo Gonzalez, Mireia
De Jaeger, Brice
Mitard, Jerome
Brunco, David
Souriau, Laurent
Cody, N
Thomas, S
Meuris, Marc #
Issue Date: Oct-2008
Publisher: Elsevier
Series Title: Materials Science in Semiconductor Processing vol:11 issue:5-6 pages:364-367
Conference: E-MRS date:Juni 2008
Abstract: It is shown that the high density of threading dislocations (TDs) and, more specifically, the high density of point defects associated with it and present in our strained Ge epitaxial layers on a Si0.2Ge0.8 relaxed buffer layer degrades the mobility and the leakage current of pMOSFETs and p(+)n junctions fabricated therein. Annealing in the range 550-650 degrees C prior to gate stack deposition improves the device performance, although there is no marked change in the TD density. From this, it is concluded that the annealing may reduce the density of point defects grown in during the epitaxial deposition. (C) 2008 Elsevier Ltd. All rights reserved.
ISSN: 1369-8001
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Associated Section of ESAT - INSYS, Integrated Systems
ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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