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Title: Accurate carrier profiling of n-type GaAs junctions
Authors: Clarysse, Trudo ×
Brammertz, Guy
Vanhaeren, Danielle
Eyben, Pierre
Goossens, Jozefien
Clemente, Francesca
Meuris, Marc
Vandervorst, Wilfried
Srnanek, Rudolf
Kinder, Rudolf
Sciana, B
Radziewicz, D
Li, Zhiqiang #
Issue Date: Oct-2008
Publisher: Elsevier
Series Title: Materials Science in Semiconductor Processing vol:11 issue:5-6 pages:259-266
Conference: International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting Strasbourg, FRANCE, MAY 26-30, 2008
Abstract: As CMOS is approaching the 22 nm node, the importance of high-mobility materials such as Ge and GaAs is rapidly increasing. For the timely development of these new technologies accurate dopant and carrier-profiling solutions for source-drain extensions with these materials are required. Identical n-type-doped (Si, Se) layers on same and opposite type medium-doped layers on S.I. GaAs substrates will be investigated, with layer thicknesses ranging from 200 down to 50 nm and doping concentration levels up to 1e20 at/cm(3). In this work, secondary ion mass spectrometry will be used for dopant profiling. For GaAs carrier profiling, conventional spreading resistance probe, as commonly used in Si-CMOS, fails. Hence, reliable alternatives need to be found for characterizing these high-low structures. Techniques to be discussed range from the more conventional approaches such as Hall or electrochemical capacitance-voltage (performed by different laboratories), over micro-Raman spectroscopy and photoluminescence along a beveled surface, up to more advanced approaches using scanning spreading resistance microscopy. (C) 2008 Elsevier Ltd. All rights reserved.
URI: 
ISSN: 1369-8001
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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