Title: Effects of processing and radiation bias on leakage currents in Ge pMOSFETs
Authors: Zhang, Cher Xuan ×
Zhang, En Xia
Fleetwood, Daniel M
Schrimpf, Ronald D
Galloway, Kenneth F
Simoen, Eddy
Mitard, Jerome
Claeys, Cor #
Issue Date: Dec-2010
Publisher: IEEE
Series Title: IEEE Transactions on Nuclear Science vol:57 issue:6 pages:3066-3070
ISSN: 0018-9499
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Non-KU Leuven Association publications
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science