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Title: Electrical properties of Al2O3/ZrO2/Al2O3 gate stack in p-substrate metal oxide semiconductor devices
Authors: Xu, Zhen ×
Kaczer, B.
Degraeve, R.
De Gendt, Stefan
Heyns, Marc
Groeseneken, Guido #
Issue Date: Jan-2003
Publisher: Electrochemical soc inc
Series Title: Journal of the electrochemical society vol:150 issue:5 pages:G307-G310
Abstract: The electrical properties of the Al2O3/ZrO2/Al2O3 gate dielectric stack are investigated in p-substrate metal oxide semiconductor capacitors and transistors. It is found that the leakage current through the gate stack shows different temperature dependence in low- and high-field regions. This is explained by the different conduction mechanisms at the low and high gate bias. The leakage current is mainly due to tunneling in the low field region, while both tunneling and Frenckel-Poole hopping are involved in the conduction in the high-field region. After constant current stress, both increase of leakage current and positive charge generation are observed. It is also found that the breakdown always occurs in the source/drain overlapped region after uniform voltage stress of the gate stack. The weaker overlapped region is related to ion implantation-induced crystal defects or high doping concentration in the source/drain regions. (C) 2003 The Electrochemical Society.
ISSN: 0013-4651
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Molecular Design and Synthesis
Department of Materials Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
× corresponding author
# (joint) last author

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